features trenchfet power mosfet 25-v v gs provides extra head room for safe operation applications notebook - load switch - battery charger switch si4973dy vishay siliconix new product document number: 72164 s-03599?rev. a, 31-mar-03 www.vishay.com 1 dual p-channel 25-v (g-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) - 30 0.023 @ v gs = - 10 v - 7.6 - 30 0.029 @ v gs = - 6 v - 6.8 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet ordering information: si4973dy si4973dy-t1 (with t ape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds -30 v gate-source voltage v gs 25 v continuous drain current (t j = 150 c) a t a = 25 c i d - 7.6 - 5.8 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 70 c i d - 6.1 - 4.6 a pulsed drain current i dm -30 a continuous source current (diode conduction) a i s - 1.7 - 0.9 maximum power dissipation a t a = 25 c p d 2.0 1.1 w maximum power dissipation a t a = 70 c p d 1.3 0.7 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 45 62.5 maximum junction-to-ambient a steady state r thja 85 110 c/w maximum junction-to-foot (drain) steady state r thjf 26 35 c/w notes a. surface mounted on 1 ? x 1? fr4 board.
si4973dy vishay siliconix new product www.vishay.com 2 document number: 72164 s-03599?rev. a, 31-mar-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a -1 -3 v gate body leakage i gss v ds = 0 v, v gs = 20 v 100 na gate-body leakage i gss v ds = 0 v, v gs = 25 v 200 na zero gate voltage drain current i dss v ds = - 24 v, v gs = 0 v -1 a zero gate voltage drain current i dss v ds = - 24 v, v gs = 0 v, t j = 55 c -25 a on-state drain current a i d(on) v ds = - 5 v, v gs = - 10 v -30 a drain source on state resistance a r ds( ) v gs = - 10 v, i d = - 7.6 a 0.018 0.023 drain-source on-state resistance a r ds(on) v gs = - 6 v, i d = - 6.8 a 0.023 0.029 forward transconductance a g fs v ds = - 10 v, i d = - 7.6 a 22 s diode forward voltage a v sd i s = - 1.7 a, v gs = 0 v - 0.8 - 1.2 v dynamic b total gate charge q g 37 56 gate-source charge q gs v ds = - 15 v, v gs = - 10 v, i d = - 7.6 a 6 nc gate-drain charge q gd 11 turn-on delay time t d(on) 10 15 rise time t r v dd = - 15 v, r l = 15 15 25 turn-off delay time t d(off) v dd = - 15 v , r l = 15 i d - 1 a, v gen = - 10 v, r g = 6 115 180 ns fall time t f 90 140 source-drain reverse recovery time t rr i f = - 1.7 a, di/dt = 100 a/ s 80 120 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 6 12 18 24 30 012345 v gs = 10 thru 5 v -55 c 25 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 3 v 4 v t c = 125 c
si4973dy vishay siliconix new product document number: 72164 s-03599?rev. a, 31-mar-03 www.vishay.com 3 typical characteristics (25 c unless noted) - on-resistance ( r ds(on) ) 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 10203040 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0 6 12 18 24 30 v ds - drain-to-source voltage (v) c oss c iss v ds = 15 v i d = 7.6 a i d - drain current (a) v gs = 10 v i d = 7.6 a v gs = 10 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.00 0.02 0.04 0.06 0.08 0.10 0246810 t j = 150 c i d = 7.6 a 30 10 1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s t j = 25 c c rss v gs = 4.5 v
si4973dy vishay siliconix new product www.vishay.com 4 document number: 72164 s-03599?rev. a, 31-mar-03 typical characteristics (25 c unless noted) 0 30 50 10 20 power (w) single pulse power time (sec) 40 10 -3 10 -2 1 10 600 10 -1 10 -4 100 - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold v oltage variance (v) v gs(th) t j - temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 100 600 10 10 -1 10 -2 safe operating area, junction-to-ambient v ds - drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse - drain current (a) i d p(t) = 10 dc 0.1 i dm limited i d(on) limited r ds(on) limited bv dss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001
si4973dy vishay siliconix new product document number: 72164 s-03599?rev. a, 31-mar-03 www.vishay.com 5 typical characteristics (25 c unless noted) 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
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